Introduction to Magnetic Random Access Memory

This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices.

Introduction to Magnetic Random Access Memory

Introduction to Magnetic Random Access Memory

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

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Introduction to Magnetic Random-Access Memory
Language: en
Pages: 264
Authors: Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Categories: Science
Type: BOOK - Published: 2016-11-14 - Publisher: John Wiley & Sons

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear
Magnetic Memory Technology
Language: en
Pages: 368
Authors: Denny D. Tang, Chi-Feng Pai
Categories: Science
Type: BOOK - Published: 2021-01-07 - Publisher: John Wiley & Sons

This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then, it goes one step forward to discuss electron spin. Following the above background discussion, readers are taught the physics of magnetic tunnel junction device (MTJ), the work horse of MRAM,
Introduction to the Electronic Properties of Materials
Language: en
Pages: 442
Authors: David C. Jiles
Categories: Technology & Engineering
Type: BOOK - Published: 2017-12-21 - Publisher: CRC Press

Electronic materials provide the basis for many high tech industries that have changed rapidly in recent years. In this fully revised and updated second edition, the author discusses the range of available materials and their technological applications. Introduction to the Electronic Properties of Materials, 2nd Edition presents the principles of
Magnetic Memory Technology
Language: en
Pages: 352
Authors: Denny D. Tang, Chi-Feng Pai
Categories: Science
Type: BOOK - Published: 2020-12-15 - Publisher: John Wiley & Sons

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM,
Spin Dynamics in Confined Magnetic Structures I
Language: en
Pages: 340
Authors: Burkard Hillebrands, Kamel Ounadjela
Categories: Science
Type: BOOK - Published: 2003-07-01 - Publisher: Springer Science & Business Media

Introductory chapters help newcomers to understand the basic concepts, and the more advanced chapters give the current state of the art for most spin dynamic issues in the milliseconds to femtoseconds range. Emphasis is placed on both the discussion of the experimental techniques and on the theoretical work. The comprehensive

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